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[外文期刊] Exciton recombination in lasing contributing an opposite abrupt change of the electrical behavior near threshold between GaN- and GaAs- multi-quantum-well laser diodes

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作者： Prasetyo, I.;Rochmadi;Wahyono, E.;Ariyanto, T. （1 Tianjin University, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Tianjin, 300072, China, 12605; 2 Hainan Technology and Business College, Haikou, 570203, China; 3 Peking University, State Key Laboratory for Artificial Microstrcture and Mesoscopic Physics, Beijing, 100871, China, 12465）

出处： Journal of Physics D: Applied Physics 2018 Vol.51 No.9 P095102

摘要： The opposite sudden change of electrical characteristics between narrow and wide bang-gap multi-quantum-well (MQW) laser diodes (LDs) in the threshold ...

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